Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

Ming Jer Kao, Hir Ming Shieh, Wei Chou Hsu, Ticn Yih Lin, Yue Huei Wu, Rong Tay Hsu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.

原文English
頁(從 - 到)1181-1186
頁數6
期刊IEEE Transactions on Electron Devices
43
發行號8
DOIs
出版狀態Published - 1996

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's」主題。共同形成了獨特的指紋。

引用此