Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

Ming Jer Kao; Hir Ming Shieh; Wei Chou Hsu; Ticn Yih Lin; Yue Huei Wu; Rong Tay Hsu

doi:10.1109/16.506766

Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

Ming Jer Kao, Hir Ming Shieh, Wei Chou Hsu, Ticn Yih Lin, Yue Huei Wu, Rong Tay Hsu

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.

原文	English
頁（從 - 到）	1181-1186
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	43
發行號	8
DOIs	https://doi.org/10.1109/16.506766
出版狀態	Published - 1996

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/16.506766

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title = "Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's",

abstract = "GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.",

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note = "Funding Information: Manuscript received January 23, 1996. The review of this paper was arranged by Editor J. Xu. This work was supported by the National Science Council, Republic of China, under Contract NSC 84-2215-E-006-017. M.-J. Kao, W.-CI. Hsu, T.-Y. Lin, Y.-H. Wn, and R.-T. Hsu are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan, ROC. H.-M. Shieh is with the Department of Electronic Engineering, Private Kung-San Institute of Technology and Commerce, Tainan, Taiwan, ROC. Publisher Item Identifier S 0018-9383(96)05552-9.",

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AU - Shieh, Hir Ming

AU - Hsu, Wei Chou

AU - Lin, Ticn Yih

AU - Wu, Yue Huei

AU - Hsu, Rong Tay

N1 - Funding Information: Manuscript received January 23, 1996. The review of this paper was arranged by Editor J. Xu. This work was supported by the National Science Council, Republic of China, under Contract NSC 84-2215-E-006-017. M.-J. Kao, W.-CI. Hsu, T.-Y. Lin, Y.-H. Wn, and R.-T. Hsu are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan, ROC. H.-M. Shieh is with the Department of Electronic Engineering, Private Kung-San Institute of Technology and Commerce, Tainan, Taiwan, ROC. Publisher Item Identifier S 0018-9383(96)05552-9.

PY - 1996

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N2 - GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.

AB - GaAs field-effect transistors (FET's) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm.

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Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

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