Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers

Sun Mo Kim, Anisha Gokarna, Ho Sang Kwack, Byoung O. Kim, Yong Hoon Cho, H. J. Kim, K. L. Wang

研究成果: Conference contribution

摘要

The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

原文English
主出版物標題2005 5th IEEE Conference on Nanotechnology
發行者IEEE Computer Society
頁面569-572
頁數4
ISBN(列印)0780391993, 9780780391994
DOIs
出版狀態Published - 2005
事件2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
持續時間: 2005 七月 112005 七月 15

出版系列

名字2005 5th IEEE Conference on Nanotechnology
2

Other

Other2005 5th IEEE Conference on Nanotechnology
國家Japan
城市Nagoya
期間05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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