In this work, we report on ZrO2 position effect of ALD HfZrOx gate dielectric with a La2O3 capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO2 position in HfZrOx dielectric. Experimental results show : (1) Under top La2O 3 capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO2 position on both of top and bottom in HfZrOx shows higher leakage (<x5) current and Vfb shift (0.18V) to band edge than HfO2 dielectric. (2) For the top La2O 3 cap device, ZrO2 addition into ALD HfO2 can have significant shift on Jg and Vfb. Bottom La 2O3 capping position stack has higher Jg (<x4) and larger Vfb shift (-0.15V) than the top La 2O3 cap position for nMOSCAP device.