Investigation of the structural and electrical characterization on ZrO 2 addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, S. J. Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this work, we report on ZrO2 position effect of ALD HfZrOx gate dielectric with a La2O3 capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO2 position in HfZrOx dielectric. Experimental results show : (1) Under top La2O 3 capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO2 position on both of top and bottom in HfZrOx shows higher leakage (<x5) current and Vfb shift (0.18V) to band edge than HfO2 dielectric. (2) For the top La2O 3 cap device, ZrO2 addition into ALD HfO2 can have significant shift on Jg and Vfb. Bottom La 2O3 capping position stack has higher Jg (<x4) and larger Vfb shift (-0.15V) than the top La 2O3 cap position for nMOSCAP device.

原文English
主出版物標題2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011
DOIs
出版狀態Published - 2011 七月 20
事件2011 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011 - Saratoga Springs, NY, United States
持續時間: 2011 五月 162011 五月 18

出版系列

名字ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
ISSN(列印)1078-8743

Other

Other2011 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011
國家United States
城市Saratoga Springs, NY
期間11-05-1611-05-18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

指紋 深入研究「Investigation of the structural and electrical characterization on ZrO <sub>2</sub> addition for ALD HfO<sub>2</sub> with La<sub>2</sub>O<sub>3</sub> capping layer integrated metal-oxide semiconductor capacitors」主題。共同形成了獨特的指紋。

  • 引用此

    Chiang, C. K., Chang, J. C., Liu, W. H., Liu, C. C., Lin, J. F., Yang, C. L., Wu, J. Y., & Wang, S. J. (2011). Investigation of the structural and electrical characterization on ZrO 2 addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors. 於 2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011 [5898177] (ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings). https://doi.org/10.1109/ASMC.2011.5898177