TY - JOUR
T1 - Investigation of the trap states and their effect on the low-frequency noise in GaN/AlGaN HFETs
AU - Liu, W. L.
AU - Chen, Y. L.
AU - Balandin, A. A.
AU - Wang, K. L.
N1 - Funding Information:
Debido a Que el ámbito rural puede mantener ciertas características comunes, como mayor dependencia del medio, demografia regresiva, desagregación geográfica -en la provincia de Albacete la mitad de los municipios tienen pedanías-, así como coberturas sanitarias no totales (el sanitario de APD sólo tiene obligación de atender una consulta diaria en la cabecera del «partido sanitario») , puede ser Que las conclusiones aquí expuestas tengan una trascendencia tal Que aunque no permitan una extrapolación total de los datos, si vislumbren la existencia de ciertos riesgos de deficiencias vacunales y la necesidad de un conocimiento relativamente fácil de la realidad , Que sustente la toma de medidas para elevar la salud de la comunidad.
PY - 2005
Y1 - 2005
N2 - It has been suggested the surface defects and dislocations could act as the leakage paths affecting the low-frequency noise performance of the AlGaN/GaN heterostructure field-effect transistors. In this paper we report results of the capacitance-voltage (CV) characterization of SiO2-passivated Al 0.2Ga0.8N/GaN heterostructure field-effect transistors. From the measured frequency dependent CV profiling data, we identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and on the surface along the ungated region between the gate and drain. Based on the measured data, the influence of the channel traps on the low-frequency noise spectra and the effect of the surface traps on possible leakage noise are analyzed and compared with previous studies.
AB - It has been suggested the surface defects and dislocations could act as the leakage paths affecting the low-frequency noise performance of the AlGaN/GaN heterostructure field-effect transistors. In this paper we report results of the capacitance-voltage (CV) characterization of SiO2-passivated Al 0.2Ga0.8N/GaN heterostructure field-effect transistors. From the measured frequency dependent CV profiling data, we identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and on the surface along the ungated region between the gate and drain. Based on the measured data, the influence of the channel traps on the low-frequency noise spectra and the effect of the surface traps on possible leakage noise are analyzed and compared with previous studies.
UR - http://www.scopus.com/inward/record.url?scp=28444492338&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28444492338&partnerID=8YFLogxK
U2 - 10.1117/12.609571
DO - 10.1117/12.609571
M3 - Conference article
AN - SCOPUS:28444492338
SN - 0277-786X
VL - 5844
SP - 268
EP - 275
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
M1 - 30
T2 - Noise in Devices and Circuits III
Y2 - 24 May 2005 through 26 May 2005
ER -