Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

Shih Chang Tsai; San Lein Wu; Po Chin Huang; Bo Chin Wang; Kai Shiang Tsai; Tsung Hsien Kao; Chih Wei Yang; Cheng Guo Chen; Osbert Cheng; Yean Kuen Fang; Shoou Jinn Chang; Jone Fang Chen

doi:10.7567/JJAP.53.08LB03

Investigation of trap properties of Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

Shih Chang Tsai, San Lein Wu, Po Chin Huang, Bo Chin Wang, Kai Shiang Tsai, Tsung Hsien Kao, Chih Wei Yang, Cheng Guo Chen, Osbert Cheng, Yean Kuen Fang, Shoou Jinn Chang, Jone Fang Chen

微電子工程研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, the trap properties of composite Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO₂ pMOSFETs, the interface property and drive current of Hf_0.83Zr_0.17O₂ pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO₂ film can be suppressed by mixing the film with a HfO₂ film. Consequently, comparable oxide trap densities and trapping depths between Hf _0.83Zr_0.17O₂ and HfO₂ pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf_0.83Zr_0.17O ₂ pMOSFETs.

原文	English
文章編號	08LB03
期刊	Japanese journal of applied physics
卷	53
發行號	8 SPEC. ISSUE 1
DOIs	https://doi.org/10.7567/JJAP.53.08LB03
出版狀態	Published - 2014 8月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

存取文件

10.7567/JJAP.53.08LB03

其它文件與鏈接

引用此

Tsai, S. C., Wu, S. L., Huang, P. C., Wang, B. C., Tsai, K. S., Kao, T. H., Yang, C. W., Chen, C. G., Cheng, O., Fang, Y. K., Chang, S. J., & Chen, J. F. (2014). Investigation of trap properties of Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses. Japanese journal of applied physics, 53(8 SPEC. ISSUE 1), 文章 08LB03. https://doi.org/10.7567/JJAP.53.08LB03

@article{4da7fc04c0844a7f90f45e9cae0371be,

title = "Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses",

abstract = "In this study, the trap properties of composite Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO2 pMOSFETs, the interface property and drive current of Hf0.83Zr0.17O2 pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO2 film can be suppressed by mixing the film with a HfO2 film. Consequently, comparable oxide trap densities and trapping depths between Hf 0.83Zr0.17O2 and HfO2 pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf0.83Zr0.17O 2 pMOSFETs.",

author = "Tsai, {Shih Chang} and Wu, {San Lein} and Huang, {Po Chin} and Wang, {Bo Chin} and Tsai, {Kai Shiang} and Kao, {Tsung Hsien} and Yang, {Chih Wei} and Chen, {Cheng Guo} and Osbert Cheng and Fang, {Yean Kuen} and Chang, {Shoou Jinn} and Chen, {Jone Fang}",

year = "2014",

month = aug,

doi = "10.7567/JJAP.53.08LB03",

language = "English",

volume = "53",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "8 SPEC. ISSUE 1",

}

Tsai, SC, Wu, SL, Huang, PC, Wang, BC, Tsai, KS, Kao, TH, Yang, CW, Chen, CG, Cheng, O, Fang, YK, Chang, SJ & Chen, JF 2014, 'Investigation of trap properties of Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses', Japanese journal of applied physics, 卷 53, 編號 8 SPEC. ISSUE 1, 08LB03. https://doi.org/10.7567/JJAP.53.08LB03

TY - JOUR

T1 - Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

AU - Tsai, Shih Chang

AU - Wu, San Lein

AU - Huang, Po Chin

AU - Wang, Bo Chin

AU - Tsai, Kai Shiang

AU - Kao, Tsung Hsien

AU - Yang, Chih Wei

AU - Chen, Cheng Guo

AU - Cheng, Osbert

AU - Fang, Yean Kuen

AU - Chang, Shoou Jinn

AU - Chen, Jone Fang

PY - 2014/8

Y1 - 2014/8

N2 - In this study, the trap properties of composite Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO2 pMOSFETs, the interface property and drive current of Hf0.83Zr0.17O2 pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO2 film can be suppressed by mixing the film with a HfO2 film. Consequently, comparable oxide trap densities and trapping depths between Hf 0.83Zr0.17O2 and HfO2 pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf0.83Zr0.17O 2 pMOSFETs.

AB - In this study, the trap properties of composite Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO2 pMOSFETs, the interface property and drive current of Hf0.83Zr0.17O2 pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO2 film can be suppressed by mixing the film with a HfO2 film. Consequently, comparable oxide trap densities and trapping depths between Hf 0.83Zr0.17O2 and HfO2 pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf0.83Zr0.17O 2 pMOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=84906057217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906057217&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.08LB03

DO - 10.7567/JJAP.53.08LB03

M3 - Article

AN - SCOPUS:84906057217

SN - 0021-4922

VL - 53

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 8 SPEC. ISSUE 1

M1 - 08LB03

ER -

Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Investigation of trap properties of Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses