Investigation of trap properties of Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

In this study, the trap properties of composite Hf_0.83Zr _0.17O₂ high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO₂ pMOSFETs, the interface property and drive current of Hf_0.83Zr_0.17O₂ pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO₂ film can be suppressed by mixing the film with a HfO₂ film. Consequently, comparable oxide trap densities and trapping depths between Hf _0.83Zr_0.17O₂ and HfO₂ pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf_0.83Zr_0.17O ₂ pMOSFETs.