Investigation of ZnO-based ultraviolet light-emitting diodes

Ching Ting Lee, Hao Yu Chang

研究成果: Conference contribution

摘要

Recently, ZnO-based semiconductors have been deposited on various substrates using various methods. Furthermore, they were used in ultraviolet light-emitting diodes (UVLEDs) due to inherent properties including wide direct bandgap and high binding energy. In this work, two different deposition systems were utilized to deposit the ZnO-based films. The resulted films were applied to fabricate the ZnO-based UVLEDs. Firstly, the high quality i-ZnO films were deposited as the active layer by using the vapor cooling condensation system to enhance the internal quantum efficiency. Secondly, the double-heterostructured MgZnO/ZnO/MgZnO layers were deposited as the active layer at low temperature using the vapor cooling condensation system to enhance light intensity. Furthermore, various component ratios of i- MgZnO and i-MgBeZnO films were deposited using a radio frequency (RF) magnetron co-sputter system. Consequently, the deposited films with various energy bandgaps were stacked alternately to form the active layer of multiple-quantum well (MQW) UVLEDs. The light emitting intensity of MQW UVLEDs was better than that of the traditional p-i-n UVLEDs. This phenomenon was attributed to the carrier confinement in well layers and improvement probability of radiative recombination.

原文English
主出版物標題Oxide-Based Materials and Devices V
發行者SPIE
ISBN(列印)9780819499004
DOIs
出版狀態Published - 2014 一月 1
事件5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
持續時間: 2014 二月 22014 二月 5

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8987
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

Other5th Annual Oxide Based Materials and Devices Conference
國家/地區United States
城市San Francisco, CA
期間14-02-0214-02-05

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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