Investigation on Blistering Behavior for n-type Silicon Solar Cells

Zih Wei Peng, Po Tsung Hsieh, Yuan Jun Lin, Chih Jeng Huang, Chi Chun Li

研究成果: Conference article同行評審

8 引文 斯高帕斯(Scopus)


Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.

頁(從 - 到)827-831
期刊Energy Procedia
出版狀態Published - 2015 1月 1
事件5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany
持續時間: 2015 3月 252015 3月 27

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