Investigation on heterostructural optoelectronic switches

Der Feng Guo, Jung Hui Tsai, Tzu Yen Weng, Chih Hung Yeng, Po Hsien Lai, Ssu Yi Fu, Ching Wen Hung, Wen-Chau Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltage VS and increases the switching current IS in the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS, the VS and IS present contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

原文English
頁(從 - 到)139-144
頁數6
期刊Surface Review and Letters
15
發行號1-2
出版狀態Published - 2008 二月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

指紋 深入研究「Investigation on heterostructural optoelectronic switches」主題。共同形成了獨特的指紋。

引用此