Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

Chen Hongyi; K. L. Wang

doi:10.1007/BF02778724

Investigation on resonant tunneling in GaAs/Al_xGa_1-xAs DBD using tunneling spectroscopy

Chen Hongyi, K. L. Wang

電機資訊學院

研究成果: Article › 同行評審

摘要

Experimental investigation on resonant tunneling in various GaAs/Al_xGa_1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by Al_xGa_1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by Al_xGa_1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

原文	English
頁（從 - 到）	70-76
頁數	7
期刊	Journal of Electronics
卷	7
發行號	1
DOIs	https://doi.org/10.1007/BF02778724
出版狀態	Published - 1990 1月

All Science Journal Classification (ASJC) codes

電氣與電子工程

存取文件

10.1007/BF02778724

其它文件與鏈接

引用此

@article{baa21c45c40549359815fbed4ec0030f,

title = "Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy",

abstract = "Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.",

author = "Chen Hongyi and Wang, \{K. L.\}",

year = "1990",

month = jan,

doi = "10.1007/BF02778724",

language = "English",

volume = "7",

pages = "70--76",

journal = "Journal of Electronics",

issn = "0217-9822",

publisher = "Science Press",

number = "1",

}

TY - JOUR

T1 - Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

AU - Hongyi, Chen

AU - Wang, K. L.

PY - 1990/1

Y1 - 1990/1

N2 - Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

AB - Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

UR - https://www.scopus.com/pages/publications/51649149439

UR - https://www.scopus.com/inward/citedby.url?scp=51649149439&partnerID=8YFLogxK

U2 - 10.1007/BF02778724

DO - 10.1007/BF02778724

M3 - Article

AN - SCOPUS:51649149439

SN - 0217-9822

VL - 7

SP - 70

EP - 76

JO - Journal of Electronics

JF - Journal of Electronics

IS - 1

ER -

Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Investigation on resonant tunneling in GaAs/Al_xGa_1-xAs DBD using tunneling spectroscopy