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Investigation the plating and wetting ability of reactive sputtered Molybdenum-Tungsten multi-layers for advanced Cu metallization

  • Tai Chen Kuo
  • , Tzu Lang Shih
  • , Yin Hsien Su
  • , Wen Hsi Lee
  • , Wei Hsiang Liao

研究成果: Conference contribution

1   !!Link opens in a new tab 引文 斯高帕斯(Scopus)

摘要

Molybdenum-Tungsten (MoxW) alloy films were deposited on SiO2 substrates by reactive sputtering. Direct electroplating Cu on Molybdenum-Tungsten alloy films and annealing in N2 were carried out. In this study, the effect of electroplating time and annealing temperature on the structural, plating and wetting ability of Molybdenum-Tungsten alloy films was investigated. The films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). The results show that Cu can be directly electroplated on Molybdenum-Tungsten alloy films with uniform nucleation. After annealing, de-wetting behavior of Molybdenum-Tungsten alloy films are shown to be better than Ta even up to 500°C.

原文English
主出版物標題16th International Conference on Nanotechnology - IEEE NANO 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面703-705
頁數3
ISBN(電子)9781509039142
DOIs
出版狀態Published - 2016 11月 21
事件16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
持續時間: 2016 8月 222016 8月 25

出版系列

名字16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
國家/地區Japan
城市Sendai
期間16-08-2216-08-25

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學

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