TY - JOUR
T1 - Investigations of δ-doped in0.52Al0.48As/ InxGai1-xAs/InP HEMTs with different channel structures
AU - Lee, Ching Sung
AU - Chen, Hsin Hung
AU - Huang, Jun Chin
AU - Hsu, Wei Chou
AU - Chen, Yeong Jia
PY - 2005/12
Y1 - 2005/12
N2 - The device characteristics of δ-doped In0.52Al 0.48As/InGaAs/InP high-electron-mobility transistors (HEMTs) with different channel designs, grown by using the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique, have been studied. The In xGa1_xAs channel structures include a step-graded channel (SGC) with x = 0.56/0.53/0.5, a lattice-matched channel (LMC) with x = 0.53, and an inverse linearly-graded channel (ILGC) with x = 0.5 → 0.56. Improvements in the device's threshold, extrinsic conductance, saturation current density, gate-voltage swing (GVS), output conductance, voltage gain, and high-frequency and high-temperature performances have been comprehensively investigated and compared with respect to the specific channel design.
AB - The device characteristics of δ-doped In0.52Al 0.48As/InGaAs/InP high-electron-mobility transistors (HEMTs) with different channel designs, grown by using the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique, have been studied. The In xGa1_xAs channel structures include a step-graded channel (SGC) with x = 0.56/0.53/0.5, a lattice-matched channel (LMC) with x = 0.53, and an inverse linearly-graded channel (ILGC) with x = 0.5 → 0.56. Improvements in the device's threshold, extrinsic conductance, saturation current density, gate-voltage swing (GVS), output conductance, voltage gain, and high-frequency and high-temperature performances have been comprehensively investigated and compared with respect to the specific channel design.
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M3 - Article
AN - SCOPUS:30344469050
SN - 0374-4884
VL - 47
SP - 1046
EP - 1052
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 6
ER -