Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

Bo Yi Chou, Wei Chou Hsu, Han Yin Liu, Ching Sung Lee, Yu Sheng Wu, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu, Meng Hsueh Chiang

研究成果: Article

10 引文 (Scopus)

摘要

This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

原文English
文章編號015009
期刊Semiconductor Science and Technology
30
發行號1
DOIs
出版狀態Published - 2015 一月 1

指紋

Spray pyrolysis
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
pyrolysis
sprayers
ultrasonics
Ultrasonics
Metals
Current density
Gates (transistor)
Gate dielectrics
Drain current
Cutoff frequency
Electric potential
Electric breakdown
current density
Passivation
Leakage currents
Hysteresis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Chou, Bo Yi ; Hsu, Wei Chou ; Liu, Han Yin ; Lee, Ching Sung ; Wu, Yu Sheng ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min ; Chiang, Meng Hsueh. / Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method. 於: Semiconductor Science and Technology. 2015 ; 卷 30, 編號 1.
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abstract = "This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1{\%} → 43.6{\%}). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.",
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Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method. / Chou, Bo Yi; Hsu, Wei Chou; Liu, Han Yin; Lee, Ching Sung; Wu, Yu Sheng; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min; Chiang, Meng Hsueh.

於: Semiconductor Science and Technology, 卷 30, 編號 1, 015009, 01.01.2015.

研究成果: Article

TY - JOUR

T1 - Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Lee, Ching Sung

AU - Wu, Yu Sheng

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

AU - Chiang, Meng Hsueh

PY - 2015/1/1

Y1 - 2015/1/1

N2 - This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

AB - This work investigates Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al2O3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (IDSS: 337.6 mA mm-1 → 462.9 mA mm-1), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BVGD: -103.8 V → -183.5 V), unity-gain cut-off frequency (fT: 11.3 GHz → 17.7 GHz), maximum oscillation frequency (fmax: 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring fT and fmax of the studied MOS-HEMT (Schottky-gate HEMT) are VGS = -2.5 (-2) V and VDS = 7 V. The corresponding VGS and VDS biases are -2.5 (-2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C-V) hysteresis is obtained in the Al2O3-MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300-480 K are also studied.

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U2 - 10.1088/0268-1242/30/1/015009

DO - 10.1088/0268-1242/30/1/015009

M3 - Article

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VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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