A novel Γ-gate Al0.24Ga0.76As/In 0.15Ga0.85As metal-oxide-semiconductor (MOS) high-electron-mobility transistor (MOS-HEMT) by using methods of ozone water oxidation and shifted exposure has been comprehensively investigated. Effective gate-length reduction, improved gate insulation, and formations of a field plate and a full surface passivation within the drain-source region are simultaneously achieved. The present Γ-gate MOS-HEMT has demonstrated superior device performances, including improvements of 523% (12.8%) in two-terminal gate-drain breakdown, 137% (36.1%) in on-state drain-source breakdown, 16.1% (11.8%) in maximum extrinsic transconductance (g m, max), 34.5% (9.7%) in intrinsic voltage gain (AV), 27.8% (16.2%) in power-added efficiency, 34.5% (19.8%) in minimum noise figure (NFmin) , and 28%/39.3% (11.4%/21.6%) in unity-gain cutoff frequency/maximum oscillation frequency (fT/fmax), as compared to a conventional Schottky-gate (MOS-gate) device fabricated upon the same epitaxial structure by using an identical optical mask set. Investigations of optimum extracted parasitics, small-signal device parameters, and high-temperature device characteristics at 300 K-450 K are also made in this work.
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