Investigations of novel Γ-gate MOS-HEMTs by ozone water oxidation and shifted exposure techniques

Ching Sung Lee, Bo Yi Chou, Sheng Han Yang, Wei Chou Hsu, Chang Luen Wu, Wen Luh Yang, Don Gey Liu, Ming Yuan Lin

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A novel Γ-gate Al0.24Ga0.76As/In 0.15Ga0.85As metal-oxide-semiconductor (MOS) high-electron-mobility transistor (MOS-HEMT) by using methods of ozone water oxidation and shifted exposure has been comprehensively investigated. Effective gate-length reduction, improved gate insulation, and formations of a field plate and a full surface passivation within the drain-source region are simultaneously achieved. The present Γ-gate MOS-HEMT has demonstrated superior device performances, including improvements of 523% (12.8%) in two-terminal gate-drain breakdown, 137% (36.1%) in on-state drain-source breakdown, 16.1% (11.8%) in maximum extrinsic transconductance (g m, max), 34.5% (9.7%) in intrinsic voltage gain (AV), 27.8% (16.2%) in power-added efficiency, 34.5% (19.8%) in minimum noise figure (NFmin) , and 28%/39.3% (11.4%/21.6%) in unity-gain cutoff frequency/maximum oscillation frequency (fT/fmax), as compared to a conventional Schottky-gate (MOS-gate) device fabricated upon the same epitaxial structure by using an identical optical mask set. Investigations of optimum extracted parasitics, small-signal device parameters, and high-temperature device characteristics at 300 K-450 K are also made in this work.

原文English
文章編號5958594
頁(從 - 到)2981-2989
頁數9
期刊IEEE Transactions on Electron Devices
58
發行號9
DOIs
出版狀態Published - 2011 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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