Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition

Ching Sung Lee, Wei Chou Hsu, Bo Yi Chou, Han Yin Liu, Cheng Long Yang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu, Chang Luen Wu

研究成果: Article

21 引文 (Scopus)

摘要

Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO2 oxide. Superior improvements for the present TiO2-dielectric MOS-HFET/TiO2-passivated HFETs are obtained, including 47.6%/23.8% in two-terminal gate-drain breakdown voltage (BV GD), 111%/22.2% in two-terminal gate-drain turn-ON voltage (VON), 47.9%/39.4% in ON-state breakdown (BVDS), 12.2%/10.2% in drain-source current density (IDS at VGS) = 0V (IDSS0), 27.2%/11.7% in maximum IDS (IDS, max), 3/1-order enhancement in on/off current ratio (IONIOFF), 58.8%/17.6% in gate-voltage swing linearity, 25.1%/13.2% in unity-gain cutoff frequency (fT), 40.6%/24.7% in maximum oscillation frequency (fmax), and 33.8%/15.6% in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K.

原文English
文章編號7073640
頁(從 - 到)1460-1466
頁數7
期刊IEEE Transactions on Electron Devices
62
發行號5
DOIs
出版狀態Published - 2015 五月 1

指紋

Spray pyrolysis
Field effect transistors
Heterojunctions
Ultrasonics
Oxides
Cutoff frequency
Electric potential
Electric breakdown
aluminum gallium nitride
Microscopes
Permittivity
Current density
Tuning
Transmission electron microscopy
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Lee, Ching Sung ; Hsu, Wei Chou ; Chou, Bo Yi ; Liu, Han Yin ; Yang, Cheng Long ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min ; Wu, Chang Luen. / Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition. 於: IEEE Transactions on Electron Devices. 2015 ; 卷 62, 編號 5. 頁 1460-1466.
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title = "Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition",
abstract = "Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO2 oxide. Superior improvements for the present TiO2-dielectric MOS-HFET/TiO2-passivated HFETs are obtained, including 47.6{\%}/23.8{\%} in two-terminal gate-drain breakdown voltage (BV GD), 111{\%}/22.2{\%} in two-terminal gate-drain turn-ON voltage (VON), 47.9{\%}/39.4{\%} in ON-state breakdown (BVDS), 12.2{\%}/10.2{\%} in drain-source current density (IDS at VGS) = 0V (IDSS0), 27.2{\%}/11.7{\%} in maximum IDS (IDS, max), 3/1-order enhancement in on/off current ratio (IONIOFF), 58.8{\%}/17.6{\%} in gate-voltage swing linearity, 25.1{\%}/13.2{\%} in unity-gain cutoff frequency (fT), 40.6{\%}/24.7{\%} in maximum oscillation frequency (fmax), and 33.8{\%}/15.6{\%} in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K.",
author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Chou, {Bo Yi} and Liu, {Han Yin} and Yang, {Cheng Long} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min} and Wu, {Chang Luen}",
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Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition. / Lee, Ching Sung; Hsu, Wei Chou; Chou, Bo Yi; Liu, Han Yin; Yang, Cheng Long; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min; Wu, Chang Luen.

於: IEEE Transactions on Electron Devices, 卷 62, 編號 5, 7073640, 01.05.2015, p. 1460-1466.

研究成果: Article

TY - JOUR

T1 - Investigations of TiO2-AlGaN/GaN/Si-passivated HFETs and MOS-HFETs using ultrasonic spray pyrolysis deposition

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Chou, Bo Yi

AU - Liu, Han Yin

AU - Yang, Cheng Long

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

AU - Wu, Chang Luen

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO2 oxide. Superior improvements for the present TiO2-dielectric MOS-HFET/TiO2-passivated HFETs are obtained, including 47.6%/23.8% in two-terminal gate-drain breakdown voltage (BV GD), 111%/22.2% in two-terminal gate-drain turn-ON voltage (VON), 47.9%/39.4% in ON-state breakdown (BVDS), 12.2%/10.2% in drain-source current density (IDS at VGS) = 0V (IDSS0), 27.2%/11.7% in maximum IDS (IDS, max), 3/1-order enhancement in on/off current ratio (IONIOFF), 58.8%/17.6% in gate-voltage swing linearity, 25.1%/13.2% in unity-gain cutoff frequency (fT), 40.6%/24.7% in maximum oscillation frequency (fmax), and 33.8%/15.6% in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K.

AB - Comparative studies for TiO2-passivated Al0.25Ga0.75N/GaN heterostructure FETs (HFETs) and TiO2-dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO2 oxide. Superior improvements for the present TiO2-dielectric MOS-HFET/TiO2-passivated HFETs are obtained, including 47.6%/23.8% in two-terminal gate-drain breakdown voltage (BV GD), 111%/22.2% in two-terminal gate-drain turn-ON voltage (VON), 47.9%/39.4% in ON-state breakdown (BVDS), 12.2%/10.2% in drain-source current density (IDS at VGS) = 0V (IDSS0), 27.2%/11.7% in maximum IDS (IDS, max), 3/1-order enhancement in on/off current ratio (IONIOFF), 58.8%/17.6% in gate-voltage swing linearity, 25.1%/13.2% in unity-gain cutoff frequency (fT), 40.6%/24.7% in maximum oscillation frequency (fmax), and 33.8%/15.6% in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K.

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