Investigations of varactor depletion capacitance effects of fin field-Effect transistor devices

Chien Hung Chen, Ying Chien Fang, Chung Hao Chiang, Sheng-Yuan Chu

研究成果: Article

摘要

The effects of the depletion capacitance of a varactor between fin field-effect transistor (FinFET) and bulk planar devices are investigated. Fabricated NMOS varactors are characterized and studied. The depletion capacitance of an NMOS varactor in FinFETs is lower than that of the conventional bulk planar one. Thus, the NMOS FinFET varactor provides a larger tuning range (about 10.4 times with respect to minimal capacitance) than the bulk planar one (approximately 3.7 times). The simulation results of the proposed three-dimensional (3D) devices with FinFET and bulk planar varactors show that the depletion layer width of the NMOS varactors in FinFETs is more sensitive to the applied gate voltage than the bulk planar one.

原文English
文章編號088003
期刊Japanese Journal of Applied Physics
53
發行號8
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

指紋 深入研究「Investigations of varactor depletion capacitance effects of fin field-Effect transistor devices」主題。共同形成了獨特的指紋。

  • 引用此