Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate

C. H. Lan, J. D. Hwang, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, J. C. Lin

研究成果: Article

8 引文 (Scopus)

摘要

This study investigated ZnO nanowires, grown by different solutions of zinc nitrate and zinc acetate, using scanning electron microscopy, room-temperature photoluminescence, and X-ray photoelectron spectroscopy. ZnO grown by zinc nitrate had thinner nanowires, with the average diameter being reduced by about five times, than that grown by zinc acetate. Fewer surface defects and better electrical performance were obtained in zinc acetate-ZnO. The turn-on voltage and ideality factor were reduced from 2.2 to 2.0 V and 3.7 to 2.14, respectively, for the diodes grown by zinc nitrate and zinc acetate. Leakage current density was also decreased by about 1 order under 4 V reverse-bias voltage.

原文English
頁(從 - 到)H363-H365
期刊Electrochemical and Solid-State Letters
13
發行號11
DOIs
出版狀態Published - 2010 九月 20

指紋

Zinc Acetate
Nanowires
Heterojunctions
nitrates
heterojunctions
acetates
Nitrates
Diodes
nanowires
Zinc
zinc
diodes
aqueous solutions
Surface defects
Bias voltage
Leakage currents
Photoluminescence
Current density
X ray photoelectron spectroscopy
electric potential

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

引用此文

Lan, C. H. ; Hwang, J. D. ; Chang, S. J. ; Liao, J. S. ; Cheng, Y. C. ; Lin, W. J. ; Lin, J. C. / Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate. 於: Electrochemical and Solid-State Letters. 2010 ; 卷 13, 編號 11. 頁 H363-H365.
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abstract = "This study investigated ZnO nanowires, grown by different solutions of zinc nitrate and zinc acetate, using scanning electron microscopy, room-temperature photoluminescence, and X-ray photoelectron spectroscopy. ZnO grown by zinc nitrate had thinner nanowires, with the average diameter being reduced by about five times, than that grown by zinc acetate. Fewer surface defects and better electrical performance were obtained in zinc acetate-ZnO. The turn-on voltage and ideality factor were reduced from 2.2 to 2.0 V and 3.7 to 2.14, respectively, for the diodes grown by zinc nitrate and zinc acetate. Leakage current density was also decreased by about 1 order under 4 V reverse-bias voltage.",
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Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate. / Lan, C. H.; Hwang, J. D.; Chang, S. J.; Liao, J. S.; Cheng, Y. C.; Lin, W. J.; Lin, J. C.

於: Electrochemical and Solid-State Letters, 卷 13, 編號 11, 20.09.2010, p. H363-H365.

研究成果: Article

TY - JOUR

T1 - Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate

AU - Lan, C. H.

AU - Hwang, J. D.

AU - Chang, S. J.

AU - Liao, J. S.

AU - Cheng, Y. C.

AU - Lin, W. J.

AU - Lin, J. C.

PY - 2010/9/20

Y1 - 2010/9/20

N2 - This study investigated ZnO nanowires, grown by different solutions of zinc nitrate and zinc acetate, using scanning electron microscopy, room-temperature photoluminescence, and X-ray photoelectron spectroscopy. ZnO grown by zinc nitrate had thinner nanowires, with the average diameter being reduced by about five times, than that grown by zinc acetate. Fewer surface defects and better electrical performance were obtained in zinc acetate-ZnO. The turn-on voltage and ideality factor were reduced from 2.2 to 2.0 V and 3.7 to 2.14, respectively, for the diodes grown by zinc nitrate and zinc acetate. Leakage current density was also decreased by about 1 order under 4 V reverse-bias voltage.

AB - This study investigated ZnO nanowires, grown by different solutions of zinc nitrate and zinc acetate, using scanning electron microscopy, room-temperature photoluminescence, and X-ray photoelectron spectroscopy. ZnO grown by zinc nitrate had thinner nanowires, with the average diameter being reduced by about five times, than that grown by zinc acetate. Fewer surface defects and better electrical performance were obtained in zinc acetate-ZnO. The turn-on voltage and ideality factor were reduced from 2.2 to 2.0 V and 3.7 to 2.14, respectively, for the diodes grown by zinc nitrate and zinc acetate. Leakage current density was also decreased by about 1 order under 4 V reverse-bias voltage.

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