Investigations on Al0.2Ga0.8As/In 0.2Ga0.8As MOS-pHEMTs with different shifted λ-gate structures

Ching Sung Lee; Ming Yuan Lin; Bo Yi Chou; Wei Chou Hsu; Han Yin Liu; Chiu Sheng Ho; Ying Nan Lai

doi:10.1149/2.008201jss

Investigations on Al_0.2Ga_0.8As/In _0.2Ga_0.8As MOS-pHEMTs with different shifted λ-gate structures

Ching Sung Lee, Ming Yuan Lin, Bo Yi Chou, Wei Chou Hsu, Han Yin Liu, Chiu Sheng Ho, Ying Nan Lai

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Al_0.2Ga_0.8As/In_0.2Ga_0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted λ-gate structures have been comprehensively investigated in this work. The present λ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised λ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.

原文	English
頁（從 - 到）	Q1-Q5
期刊	ECS Journal of Solid State Science and Technology
卷	1
發行號	1
DOIs	https://doi.org/10.1149/2.008201jss
出版狀態	Published - 2012

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10.1149/2.008201jss

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title = "Investigations on Al0.2Ga0.8As/In 0.2Ga0.8As MOS-pHEMTs with different shifted λ-gate structures",

abstract = "Al0.2Ga0.8As/In0.2Ga0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted λ-gate structures have been comprehensively investigated in this work. The present λ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised λ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.",

author = "Lee, {Ching Sung} and Lin, {Ming Yuan} and Chou, {Bo Yi} and Hsu, {Wei Chou} and Liu, {Han Yin} and Ho, {Chiu Sheng} and Lai, {Ying Nan}",

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T1 - Investigations on Al0.2Ga0.8As/In 0.2Ga0.8As MOS-pHEMTs with different shifted λ-gate structures

AU - Lee, Ching Sung

AU - Lin, Ming Yuan

AU - Chou, Bo Yi

AU - Hsu, Wei Chou

AU - Liu, Han Yin

AU - Ho, Chiu Sheng

AU - Lai, Ying Nan

PY - 2012

Y1 - 2012

N2 - Al0.2Ga0.8As/In0.2Ga0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted λ-gate structures have been comprehensively investigated in this work. The present λ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised λ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.

AB - Al0.2Ga0.8As/In0.2Ga0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted λ-gate structures have been comprehensively investigated in this work. The present λ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised λ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.

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Investigations on Al0.2Ga0.8As/In 0.2Ga0.8As MOS-pHEMTs with different shifted λ-gate structures

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Investigations on Al_0.2Ga_0.8As/In _0.2Ga_0.8As MOS-pHEMTs with different shifted λ-gate structures