Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. J. Chiu

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)


We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.

頁(從 - 到)1625-1628
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
出版狀態Published - 2007
事件33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
持續時間: 2006 8月 132006 8月 17

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學


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