Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

Lurng Shehng Lee, Chungpin Liao, Chung Len Lee, Tzuen His Huang, Denny Duan Lee Tang, Ting Shien Duh, Tsing Tyan Yang

研究成果: Article

36 引文 斯高帕斯(Scopus)

摘要

This paper studies issues related with using high energy protons to create local semi-insulating silicon regions on IC wafers for device isolation and realization of high-Q IC inductors. Topics on two approaches, i.e., one using Al as the radiation mask and the other using proton direct-write on wafers were studied. It was shown that Al can effectively mask the proton bombardment of 15 MeV up to the fluence of 1017 cm-2. For the unmasking direct write of the proton bombardment, isolation in the silicon wafer can be achieved without damaging active devices if the proton fluence is kept below 1 × 1014 cm-2 with the substrate resistivity level chosen at 140 Ω-cm, or kept at 1 × 1015 cm-2 with the substrate resistivity level chosen at 15 Ω-cm. Under the above approaches, the 1 h-200 °C thermal treatment, which is necessary for device final packaging, still gives enough high resistivity for the semi-insulating regions while recovers somewhat the active device characteristics. For the integrated passive inductor fabricated on the surface of the silicon wafer, the proton radiation improves its Q value.

原文English
頁(從 - 到)928-935
頁數8
期刊IEEE Transactions on Electron Devices
48
發行號5
DOIs
出版狀態Published - 2001 五月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此