Junction characteristics of SrTiO₃ or BaTiO₃ on p-Si (100) heterostructures

The authors report the fabrication of p-n junctions, consisting of n-type SrTiO₃ or BaTiO₃ and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO₃/Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO₃/Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO₃/Si grown at an optimum growth temperature of 650°C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite.