TY - JOUR
T1 - Junctionless FETs with a Fin Body for Multi-VTH and Dynamic Threshold Operation
AU - Kumar, Malkundi Puttaveerappa Vijay
AU - Lin, Jer Yi
AU - Kao, Kuo Hsing
AU - Chao, Tien Sheng
N1 - Funding Information:
Manuscript received April 22, 2018; revised June 3, 2018; accepted June 11, 2018. Date of publication June 28, 2018; date of current version July 23, 2018. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant 106-2221-E-009-151-MY3, Grant 107-2633-E-009-003, and Grant 107-2636-E-006-004. The review of this paper was arranged by Editor G. L. Snider. (Malkundi Puttaveerappa Vijay Kumar and Jer-Yi Lin are co-first authors.) (Corresponding author: Tien-Sheng Chao.) M. P. V. Kumar, J.-Y. Lin, and T.-S. Chao are with the Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan (e-mail: tschao@mail.nctu.edu.tw).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2018/8
Y1 - 2018/8
N2 - In this paper, a n-type junctionless FET (JLFET) with a p-type fin body (FB) is investigated using a 3-D numerical simulator. We show that the proposed device (FB-JLFET) with a p+ FB can control the electrostatic potential of the channel more efficiently for multi- VTH (threshold voltage) and dynamic threshold (DT) operation. Moreover, body bias application is implemented in FB-JLFET and a large body factor (gamma) is predicted for wide range VTH modulation. Thanks to the stronger potential coupling between the channel and FB, the proposed device exhibits gamma improvement compared to the conventional JL bulk FinFETs under the same electrostatic control. In addition, DT operation is studied in the form of a JLFET for the first time and it exhibits 37% improvement of the on-state drive current and better subthreshold swing (S.S.) compared to FB-JLFET without DT. This paper provides the feasibility of multi- VTH operation with body bias mode for high performance or low-power applications and DT operation for high-speed circuits with low power consumption.
AB - In this paper, a n-type junctionless FET (JLFET) with a p-type fin body (FB) is investigated using a 3-D numerical simulator. We show that the proposed device (FB-JLFET) with a p+ FB can control the electrostatic potential of the channel more efficiently for multi- VTH (threshold voltage) and dynamic threshold (DT) operation. Moreover, body bias application is implemented in FB-JLFET and a large body factor (gamma) is predicted for wide range VTH modulation. Thanks to the stronger potential coupling between the channel and FB, the proposed device exhibits gamma improvement compared to the conventional JL bulk FinFETs under the same electrostatic control. In addition, DT operation is studied in the form of a JLFET for the first time and it exhibits 37% improvement of the on-state drive current and better subthreshold swing (S.S.) compared to FB-JLFET without DT. This paper provides the feasibility of multi- VTH operation with body bias mode for high performance or low-power applications and DT operation for high-speed circuits with low power consumption.
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U2 - 10.1109/TED.2018.2847355
DO - 10.1109/TED.2018.2847355
M3 - Article
AN - SCOPUS:85049126835
SN - 0018-9383
VL - 65
SP - 3535
EP - 3542
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 8399532
ER -