Ka-band 1-W phemt MMIC power amplifiers on 2mil-thick GaAs substrates

C. W. Huang, S. J. Chang, W. Wu, C. L. Wu, C. S. Chang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A fully matched Ka-band wideband pseudomorphic high-electron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 × 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P1db, 31-dBm Psat, and better than 12-dB output return loss.

原文English
頁(從 - 到)181-185
頁數5
期刊Microwave and Optical Technology Letters
45
發行號3
DOIs
出版狀態Published - 2005 五月 5

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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