Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

D. S. Yu, Albert Chin, C. H. Wu, M. F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, S. P. McAlister

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.

原文English
主出版物標題IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
頁面634-637
頁數4
出版狀態Published - 2005
事件IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
持續時間: 2005 十二月 52005 十二月 7

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(列印)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
國家/地區United States
城市Washington, DC, MD
期間05-12-0505-12-07

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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