Large magnetoresistance and Fermi surface study of Sb₂Se₂Te single crystal

We have studied the magnetotransport properties of a Sb₂Se₂Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be mβ∗=0.16mo and mγ∗=0.63mo for the β and γ bands, respectively. The Large MR of Sb₂Se₂Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.