Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal

K. Shrestha, V. Marinova, D. Graf, B. Lorenz, C. W. Chu

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9 引文 斯高帕斯(Scopus)

摘要

We have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be mβ∗=0.16mo and mγ∗=0.63mo for the β and γ bands, respectively. The Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

原文English
文章編號125901
期刊Journal of Applied Physics
122
發行號12
DOIs
出版狀態Published - 2017 9月 28

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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