Dense nanoscale twins were introduced into Cu films and nanowires through bombardment with high-energy Ar+ ions at low temperatures. Both the twin boundary density and indentation hardness of the ion-irradiated Cu films increased with decreases in the bombardment temperature. The improved mechanical strength in the ion-irradiated Cu films is attributed to twin boundary-dislocation and dislocation -dislocation interactions. The strengthened region is several hundreds of nanometers beneath the surface of the bombarded nanowires and thin strips. A mechanism based on irradiation-induced thermal spike cascades is proposed to explain the influence of the energy of the Ar+ ions and bombardment temperature on nanoscale twinning in crystalline Cu. This study provides a route to developing advanced interconnection technology for micro- and nanoelectronic devices.
All Science Journal Classification (ASJC) codes
- 化學 (全部)