摘要
Dense nanoscale twins were introduced into Cu films and nanowires through bombardment with high-energy Ar+ ions at low temperatures. Both the twin boundary density and indentation hardness of the ion-irradiated Cu films increased with decreases in the bombardment temperature. The improved mechanical strength in the ion-irradiated Cu films is attributed to twin boundary-dislocation and dislocation -dislocation interactions. The strengthened region is several hundreds of nanometers beneath the surface of the bombarded nanowires and thin strips. A mechanism based on irradiation-induced thermal spike cascades is proposed to explain the influence of the energy of the Ar+ ions and bombardment temperature on nanoscale twinning in crystalline Cu. This study provides a route to developing advanced interconnection technology for micro- and nanoelectronic devices.
原文 | English |
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頁(從 - 到) | 9805-9812 |
頁數 | 8 |
期刊 | Journal of Materials Chemistry C |
卷 | 2 |
發行號 | 46 |
DOIs | |
出版狀態 | Published - 2014 12月 14 |
All Science Journal Classification (ASJC) codes
- 一般化學
- 材料化學