Large-signal resonant tunneling diode model for SPICE3 simulation

Tai Haur Kuo, Hung C. Lin, Umadevi Anandakrishnan, Robert C. Potter, Dave Shupe

研究成果: Conference article

25 引文 斯高帕斯(Scopus)

摘要

The I-V characteristics of a multipeak resonant tunneling diode (RTD) are analyzed. A large signal model is developed so that the multipeak RTD can be used with the SPICE3 circuit simulation program. The simulated result of a 4-b A/D (analog-to-digital) converter using this model is shown. It is noted that the model can be used with existing SPICE3 device models to simulate the performance of complex circuits that contain resonant tunneling diodes.

原文English
頁(從 - 到)567-570
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1989 十二月 1
事件1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
持續時間: 1989 十二月 31989 十二月 6

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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