Laser-assisted plasma-enhanced chemical vapor deposition of silicon nitride thin film

Hung Sheng Tsai, Gwo Juinn Jaw, Sheng Hsiung Chang, Chao Chia Cheng, Ching Ting Lee, Hai Pei Liu

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Hydrogenated amorphous silicon-nitride (a-Si-N(x):H) films with low hydrogen content were deposited using a CO2 laser-assisted PECVD, or LAPECVD system. This system was based upon a conventional capacitive RF (13.56 MHz) discharge to dissociate both ammonia and silane, but the substrate could be irradiated by a CO2 laser beam as well. Whether the substrates were heated or not, irradiation with a CO2 laser beam without wavelength selection effectively reduced the amount of hydrogen bonds in the films. These films were proved to have a larger index of refraction and better surface flatness. Besides, their resistance to corrosion was considerably improved as compared to films grown under a conventional PECVD process. While the resistive heating was replaced by appropriate CO2 laser irradiation, the absorption of laser beam raised the substrate-thin film temperature up to 50-60°C only. This non-thermal process represented another advantage of our LAPECVD method.

原文English
頁(從 - 到)158-162
頁數5
期刊Surface and Coatings Technology
132
發行號2-3
DOIs
出版狀態Published - 2000 十月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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