Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang, S. C. Shei

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65 引文 斯高帕斯(Scopus)

摘要

GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire. Such an enhancement could be attributed to the reduced dislocation density in the lateral growth regions of the epitaxial layers.

原文English
頁(從 - 到)466-470
頁數5
期刊Journal of Crystal Growth
261
發行號4
DOIs
出版狀態Published - 2004 2月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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