Laterally grown n-ZnO nanowire/p-GaN heterojunction light emitting diodes

Wen Yin Weng, Shoou Jinn Chang, Cheng Liang Hsu, Sheng Po Chang, Ting Jen Hsueh

研究成果: Article

9 引文 (Scopus)

摘要

The fabrication and characteristics of laterally grown ZnO nanowire/p-GaN heterojunction light emitting diodes are reported. The ZnO nanowires were grown using a direct single-step method on a prepared p-GaN patterned substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room-temperature electroluminescent emission peak at 430 nm was attributed to the band offset at the interface between n-ZnO nanowire and p-GaN and defect-related emission from GaN.

原文English
期刊Journal of the Electrochemical Society
157
發行號9
DOIs
出版狀態Published - 2010 八月 26

指紋

Nanowires
Light emitting diodes
Heterojunctions
heterojunctions
nanowires
light emitting diodes
Current voltage characteristics
p-n junctions
Fabrication
Defects
fabrication
defects
electric potential
room temperature
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

引用此文

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abstract = "The fabrication and characteristics of laterally grown ZnO nanowire/p-GaN heterojunction light emitting diodes are reported. The ZnO nanowires were grown using a direct single-step method on a prepared p-GaN patterned substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room-temperature electroluminescent emission peak at 430 nm was attributed to the band offset at the interface between n-ZnO nanowire and p-GaN and defect-related emission from GaN.",
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Laterally grown n-ZnO nanowire/p-GaN heterojunction light emitting diodes. / Weng, Wen Yin; Chang, Shoou Jinn; Hsu, Cheng Liang; Chang, Sheng Po; Hsueh, Ting Jen.

於: Journal of the Electrochemical Society, 卷 157, 編號 9, 26.08.2010.

研究成果: Article

TY - JOUR

T1 - Laterally grown n-ZnO nanowire/p-GaN heterojunction light emitting diodes

AU - Weng, Wen Yin

AU - Chang, Shoou Jinn

AU - Hsu, Cheng Liang

AU - Chang, Sheng Po

AU - Hsueh, Ting Jen

PY - 2010/8/26

Y1 - 2010/8/26

N2 - The fabrication and characteristics of laterally grown ZnO nanowire/p-GaN heterojunction light emitting diodes are reported. The ZnO nanowires were grown using a direct single-step method on a prepared p-GaN patterned substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room-temperature electroluminescent emission peak at 430 nm was attributed to the band offset at the interface between n-ZnO nanowire and p-GaN and defect-related emission from GaN.

AB - The fabrication and characteristics of laterally grown ZnO nanowire/p-GaN heterojunction light emitting diodes are reported. The ZnO nanowires were grown using a direct single-step method on a prepared p-GaN patterned substrate. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room-temperature electroluminescent emission peak at 430 nm was attributed to the band offset at the interface between n-ZnO nanowire and p-GaN and defect-related emission from GaN.

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