Laterally-grown ZnO-nanowire photodetectors on glass substrate

W. Y. Weng; T. J. Hsueh; S. J. Chang; S. P. Chang; C. L. Hsu

doi:10.1016/j.spmi.2009.08.002

Laterally-grown ZnO-nanowire photodetectors on glass substrate

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. P. Chang, C. L. Hsu

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10^-3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.

原文	English
頁（從 - 到）	797-802
頁數	6
期刊	Superlattices and Microstructures
卷	46
發行號	5
DOIs	https://doi.org/10.1016/j.spmi.2009.08.002
出版狀態	Published - 2009 11月

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
電氣與電子工程

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10.1016/j.spmi.2009.08.002

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title = "Laterally-grown ZnO-nanowire photodetectors on glass substrate",

abstract = "We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10-3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.",

author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Chang, {S. P.} and Hsu, {C. L.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700) and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",

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AU - Weng, W. Y.

AU - Hsueh, T. J.

AU - Chang, S. J.

AU - Chang, S. P.

AU - Hsu, C. L.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700) and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/11

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N2 - We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10-3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.

AB - We propose a simple method to fabricate laterally-grown ZnO-nanowire photodetectors on glass substrates. It was found that cutoff of the fabricated photodetector occurred at ∼360 nm with a transition region of only 30 nm. With an incident light wavelength of 350 nm and an applied bias of 0.1 V, it was found that measured responsivity of the photodetector was 6.04×10-3 A/W with an ultraviolet-to-visible rejection ratio larger than 600.

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Laterally-grown ZnO-nanowire photodetectors on glass substrate

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