Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin Sheng Tang; Simon E. Hicks; Chris D.W. Wilkinson; C. M. Sotomayor Torres; W. X. Ni; Jens Birch; J. B. Joelsson; Goeran V. Hansson; A. Kvick; K. L. Wang

doi:10.1117/12.273851

Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Yin Sheng Tang, Simon E. Hicks, Chris D.W. Wilkinson, C. M. Sotomayor Torres, W. X. Ni, Jens Birch, J. B. Joelsson, Goeran V. Hansson, A. Kvick, K. L. Wang

電機資訊學院

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si _1-xGe_x single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiN_x films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiN_x coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

原文	English
頁（從 - 到）	170-177
頁數	8
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	3007
DOIs	https://doi.org/10.1117/12.273851
出版狀態	Published - 1997
事件	Silicon-Based Monolithic and Hybrid Optoelectronic Devices - San Jose, CA, United States 持續時間: 1997 2月 13 → 1997 2月 13

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電腦科學應用
應用數學
電氣與電子工程

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title = "Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots",

abstract = "Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.",

author = "Tang, {Yin Sheng} and Hicks, {Simon E.} and Wilkinson, {Chris D.W.} and {Sotomayor Torres}, {C. M.} and Ni, {W. X.} and Jens Birch and Joelsson, {J. B.} and Hansson, {Goeran V.} and A. Kvick and Wang, {K. L.}",

year = "1997",

doi = "10.1117/12.273851",

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pages = "170--177",

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AU - Tang, Yin Sheng

AU - Hicks, Simon E.

AU - Wilkinson, Chris D.W.

AU - Sotomayor Torres, C. M.

AU - Ni, W. X.

AU - Birch, Jens

AU - Joelsson, J. B.

AU - Hansson, Goeran V.

AU - Kvick, A.

AU - Wang, K. L.

PY - 1997

Y1 - 1997

N2 - Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

AB - Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si 1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.

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VL - 3007

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EP - 177

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Silicon-Based Monolithic and Hybrid Optoelectronic Devices

Y2 - 13 February 1997 through 13 February 1997

ER -

Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

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