The incorporation of omni directional reflectors into a semiconductor Light Emitting Diode (LED) was discussed. The omni directional mirror comprises the semiconductor, a metal layer and an intermediate low index dielectric layer of about quarter-wave thickness. The dielectric layer was penetrated by ana array of metallic micro-contacts for enabling electrical conductivity of the reflector structure. It was shown that the optical properties of the ODR exceeded the reflection properties of metals.
|頁（從 - 到）||244-246|
|期刊||OSA Trends in Optics and Photonics Series|
|出版狀態||Published - 2003 一月 1|
|事件||Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States|
持續時間: 2003 六月 1 → 2003 六月 6
All Science Journal Classification (ASJC) codes