Light-emitting diodes with omni-directional reflectors

Th Gessmann, Y. L. Li, J. W. Graff, E. F. Schubert, K. Streubel, Jinn-Kong Sheu

研究成果: Conference article

摘要

The incorporation of omni directional reflectors into a semiconductor Light Emitting Diode (LED) was discussed. The omni directional mirror comprises the semiconductor, a metal layer and an intermediate low index dielectric layer of about quarter-wave thickness. The dielectric layer was penetrated by ana array of metallic micro-contacts for enabling electrical conductivity of the reflector structure. It was shown that the optical properties of the ODR exceeded the reflection properties of metals.

原文English
頁(從 - 到)244-246
頁數3
期刊OSA Trends in Optics and Photonics Series
88
出版狀態Published - 2003 一月 1
事件Conference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States
持續時間: 2003 六月 12003 六月 6

All Science Journal Classification (ASJC) codes

  • Engineering(all)

指紋 深入研究「Light-emitting diodes with omni-directional reflectors」主題。共同形成了獨特的指紋。

  • 引用此

    Gessmann, T., Li, Y. L., Graff, J. W., Schubert, E. F., Streubel, K., & Sheu, J-K. (2003). Light-emitting diodes with omni-directional reflectors. OSA Trends in Optics and Photonics Series, 88, 244-246.