TY - GEN
T1 - Light extraction efficiency in III-nitride LEDs
AU - Chang, S. J.
PY - 2012
Y1 - 2012
N2 - Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.
AB - Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.
UR - http://www.scopus.com/inward/record.url?scp=84890460667&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890460667&partnerID=8YFLogxK
U2 - 10.1364/acpc.2012.as1f.4
DO - 10.1364/acpc.2012.as1f.4
M3 - Conference contribution
AN - SCOPUS:84890460667
SN - 9781557529572
T3 - Asia Communications and Photonics Conference, ACP 2012
SP - AS1F.4
BT - Asia Communications and Photonics Conference, ACP 2012
PB - Optical Society of America (OSA)
T2 - Asia Communications and Photonics Conference, ACP 2012
Y2 - 7 November 2012 through 10 November 2012
ER -