Light extraction efficiency in III-nitride LEDs

研究成果: Conference contribution

摘要

Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.

原文English
主出版物標題Asia Communications and Photonics Conference, ACP 2012
出版狀態Published - 2012 十二月 1
事件Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
持續時間: 2012 十一月 72012 十一月 10

出版系列

名字Asia Communications and Photonics Conference, ACP 2012

Other

OtherAsia Communications and Photonics Conference, ACP 2012
國家/地區China
城市Guangzhou
期間12-11-0712-11-10

All Science Journal Classification (ASJC) codes

  • 電腦網路與通信
  • 硬體和架構
  • 電氣與電子工程

指紋

深入研究「Light extraction efficiency in III-nitride LEDs」主題。共同形成了獨特的指紋。

引用此