Liquid-phase-deposited SiO2 on AlGaAs and its application

Kuan Wei Lee; Jung Sheng Huang; Yu Lin Lu; Fang Ming Lee; Hsien Cheng Lin; Jian Jun Huang; Yeong Her Wang

doi:10.1088/0268-1242/26/5/055006

Liquid-phase-deposited SiO₂ on AlGaAs and its application

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Jian Jun Huang, Yeong Her Wang

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The silicon dioxide (SiO₂) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO₂ film deposition rate is about 67 nm h^-1 for the first hour. The leakage current density is about 1.21 × 10^-6 A cm^-2 at 1 MV cm^-1. The interface trap density (D_it) and the flat-band voltage shift (ΔV_FB) are 1.28 × 10¹² cm ^-2 eV^-1 and 0.5 V, respectively. After rapid thermal annealing in the N₂ ambient at 300 °C for 1 min, the leakage current density, D_it, and ΔV_FB can be improved to 4.24 × 10^-7 A cm^-2 at 1 MV cm^-1, 1.7 × 10¹¹ cm^-2 eV^-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO₂ film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.

原文	English
文章編號	055006
期刊	Semiconductor Science and Technology
卷	26
發行號	5
DOIs	https://doi.org/10.1088/0268-1242/26/5/055006
出版狀態	Published - 2011 四月 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

存取文件

10.1088/0268-1242/26/5/055006

其它文件與鏈接

指紋深入研究「Liquid-phase-deposited SiO<sub>2</sub> on AlGaAs and its application」主題。共同形成了獨特的指紋。

引用此

@article{1570f7b533bc4000a1b78646dbeb1c9c,

title = "Liquid-phase-deposited SiO2 on AlGaAs and its application",

abstract = "The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h-1 for the first hour. The leakage current density is about 1.21 × 10-6 A cm-2 at 1 MV cm-1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm -2 eV-1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10-7 A cm-2 at 1 MV cm-1, 1.7 × 1011 cm-2 eV-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.",

author = "Lee, {Kuan Wei} and Huang, {Jung Sheng} and Lu, {Yu Lin} and Lee, {Fang Ming} and Lin, {Hsien Cheng} and Huang, {Jian Jun} and Wang, {Yeong Her}",

year = "2011",

month = apr,

day = "5",

doi = "10.1088/0268-1242/26/5/055006",

language = "English",

volume = "26",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Liquid-phase-deposited SiO2 on AlGaAs and its application

AU - Lee, Kuan Wei

AU - Huang, Jung Sheng

AU - Lu, Yu Lin

AU - Lee, Fang Ming

AU - Lin, Hsien Cheng

AU - Huang, Jian Jun

AU - Wang, Yeong Her

PY - 2011/4/5

Y1 - 2011/4/5

N2 - The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h-1 for the first hour. The leakage current density is about 1.21 × 10-6 A cm-2 at 1 MV cm-1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm -2 eV-1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10-7 A cm-2 at 1 MV cm-1, 1.7 × 1011 cm-2 eV-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.

AB - The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h-1 for the first hour. The leakage current density is about 1.21 × 10-6 A cm-2 at 1 MV cm-1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm -2 eV-1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10-7 A cm-2 at 1 MV cm-1, 1.7 × 1011 cm-2 eV-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.

UR - http://www.scopus.com/inward/record.url?scp=79953252829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953252829&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/26/5/055006

DO - 10.1088/0268-1242/26/5/055006

M3 - Article

AN - SCOPUS:79953252829

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055006

ER -