The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h-1 for the first hour. The leakage current density is about 1.21 × 10-6 A cm-2 at 1 MV cm-1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm -2 eV-1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10-7 A cm-2 at 1 MV cm-1, 1.7 × 1011 cm-2 eV-1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron- mobility transistor.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry