Liquid phase deposited SiO2 on GaN

H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang Wu, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee, J. I. Chyi

研究成果: Article

22 引文 斯高帕斯(Scopus)

摘要

An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.

原文English
頁(從 - 到)329-333
頁數5
期刊Materials Chemistry and Physics
80
發行號1
DOIs
出版狀態Published - 2003 四月 29

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

引用此

Wu, H. R., Lee, K. W., Nian, T. B., Chou, D. W., Huang Wu, J. J., Wang, Y. H., Houng, M. P., Sze, P. W., Su, Y. K., Chang, S. J., Ho, C. H., Chiang, C. I., Chern, Y. T., Juang, F. S., Wen, T. C., Lee, W. I., & Chyi, J. I. (2003). Liquid phase deposited SiO2 on GaN. Materials Chemistry and Physics, 80(1), 329-333. https://doi.org/10.1016/S0254-0584(02)00504-7