Liquid phase deposited SiO2 on GaN

H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang Wu, Y. H. Wang, M. P. Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee, J. I. Chyi

研究成果: Article

22 引文 斯高帕斯(Scopus)


An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized.

頁(從 - 到)329-333
期刊Materials Chemistry and Physics
出版狀態Published - 2003 四月 29


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


Wu, H. R., Lee, K. W., Nian, T. B., Chou, D. W., Huang Wu, J. J., Wang, Y. H., Houng, M. P., Sze, P. W., Su, Y. K., Chang, S. J., Ho, C. H., Chiang, C. I., Chern, Y. T., Juang, F. S., Wen, T. C., Lee, W. I., & Chyi, J. I. (2003). Liquid phase deposited SiO2 on GaN. Materials Chemistry and Physics, 80(1), 329-333.