Liquid-phase deposited TiO2 thin films on GaN

Tsu Yi Wu, Po Wen Sze, Jian Jiun Huang, Wei Chi Chien, Shun Kuan Lin, Chih Chun Hu, Ming Ji Tsai, Chia Ju Wu, Yeong Her Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

TiO2 films deposited on GaN layers at room temperature through a simple and low-cost liquid-phase deposition (LPI)) method are investigated. The deposition rate is 70nm/hr. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are used to analyze chemical composition. Upon annealing under an atmosphere of high purity N2, the crystalline phase of TiO2 is transformed from the amorphous to the anatase and rutile phases. Electrical characteristics show the leakage current is about 1.01×10-7A/cm2 at 1MV/cm, and the breakdown field is more than 6.5MV/cm. Moreover, the dielectric constant is about 24.4, and D it can be 7.48 × 1011 cm-2eV-1 from C-V measurement. AlGaN/GaN MOSHEMTs with TiO2 gate dielectric and HEMTs are also fabricated for comparison.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面649-652
頁數4
DOIs
出版狀態Published - 2007
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 2007 十二月 202007 十二月 22

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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