Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess

Kuan Wei Lee, Hsien Chang Lin, Kai Lin Lee, Yeong Her Wang

研究成果: Conference contribution

摘要

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide- semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high- power applications.

原文English
主出版物標題ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
頁面1437-1439
頁數3
DOIs
出版狀態Published - 2008 十二月 1
事件2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
持續時間: 2008 十月 202008 十月 23

出版系列

名字International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
國家/地區China
城市Beijing
期間08-10-2008-10-23

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 凝聚態物理學
  • 電子、光磁材料

指紋

深入研究「Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs mos-mhemt without gate recess」主題。共同形成了獨特的指紋。

引用此