Liquid phase oxidation on GaAs-based materials and the applications

研究成果: Paper

摘要

The properties of the native oxides on GaAs-based materials will be characterized. The n-channel depletion-mode GaAs MOSFETs with the liquid phase oxidized gate will be fabricated and characterized. The primary results show the stability and potential of the liquid phase oxidation method for the applications to GaAs-based devices. In addition, a new planarized shallow trench isolation technique, a simple self-align process and an oxidized AlGaAs gate for GaAs-based device's applications using liquid phase oxidation method will be demonstrated.

原文English
頁面2291-2296
頁數6
出版狀態Published - 2004 十二月 1
事件2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
持續時間: 2004 十月 182004 十月 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
國家China
城市Beijing
期間04-10-1804-10-21

指紋

Oxidation
Liquids
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Wang, Y. H. (2004). Liquid phase oxidation on GaAs-based materials and the applications. 2291-2296. 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.
Wang, Yeang Her. / Liquid phase oxidation on GaAs-based materials and the applications. 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.6 p.
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Wang, YH 2004, 'Liquid phase oxidation on GaAs-based materials and the applications', 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 04-10-18 - 04-10-21 頁 2291-2296.

Liquid phase oxidation on GaAs-based materials and the applications. / Wang, Yeang Her.

2004. 2291-2296 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

研究成果: Paper

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Wang YH. Liquid phase oxidation on GaAs-based materials and the applications. 2004. 論文發表於 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.