Liquid phase oxidation on GaAs-based transistor applications

Yeong Her Wang, Kuan Wei Lee

研究成果: Conference contribution

摘要

The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面849-852
頁數4
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 2006 一月 1
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 2006 十月 232006 十月 26

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家/地區China
城市Shanghai
期間06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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