Liquid phase oxidation on inaias and application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate

Kuan Wei Lee, Hsien Chang Lin, Ja Hong Hsieh, Yu Chun Cheng, Yeong Her Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The selective oxidation on InAIAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAIAs/lnGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

原文English
主出版物標題2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
出版狀態Published - 2008 十二月 1
事件2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
持續時間: 2008 五月 252008 五月 29

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
國家France
城市Versailles
期間08-05-2508-05-29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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