Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Kuan Wei Lee, Nan Ying Yang, Kai Lin Lee, Po Wen Sze, Mau-phon Houng, Yeong-Her Wang

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10-12 A) are also obtained.

原文English
主出版物標題2005 International Conference on Indium Phosphide and Related Materials
頁面516-519
頁數4
DOIs
出版狀態Published - 2005 十二月 1
事件2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
持續時間: 2005 五月 82005 五月 12

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2005
ISSN(列印)1092-8669

Other

Other2005 International Conference on Indium Phosphide and Related Materials
國家United Kingdom
城市Glasgow, Scotland
期間05-05-0805-05-12

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Lee, K. W., Yang, N. Y., Lee, K. L., Sze, P. W., Houng, M., & Wang, Y-H. (2005). Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation. 於 2005 International Conference on Indium Phosphide and Related Materials (頁 516-519). [1517546] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; 卷 2005). https://doi.org/10.1109/ICIPRM.2005.1517546