Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Kuan Wei Lee, Nan Ying Yang, Kai Lin Lee, Po Wen Sze, Mau-phon Houng, Yeong-Her Wang

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10-12 A) are also obtained.

原文English
主出版物標題2005 International Conference on Indium Phosphide and Related Materials
頁面516-519
頁數4
DOIs
出版狀態Published - 2005 十二月 1
事件2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
持續時間: 2005 五月 82005 五月 12

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2005
ISSN(列印)1092-8669

Other

Other2005 International Conference on Indium Phosphide and Related Materials
國家/地區United Kingdom
城市Glasgow, Scotland
期間05-05-0805-05-12

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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