Local neutron transmutation doping using isotopically enriched silicon film

Yoichi Yamada, Hiroyuki Yamamoto, Hironori Ohba, Masato Sasase, Fumitaka Esaka, Kenji Yamaguchi, Haruhiko Udono, Shin ichi Shamoto, Atsushi Yokoyama, Kiichi Hojou

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.

原文English
頁(從 - 到)2204-2208
頁數5
期刊Journal of Physics and Chemistry of Solids
68
發行號11
DOIs
出版狀態Published - 2007 十一月

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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