TY - JOUR
T1 - Local neutron transmutation doping using isotopically enriched silicon film
AU - Yamada, Yoichi
AU - Yamamoto, Hiroyuki
AU - Ohba, Hironori
AU - Sasase, Masato
AU - Esaka, Fumitaka
AU - Yamaguchi, Kenji
AU - Udono, Haruhiko
AU - Shamoto, Shin ichi
AU - Yokoyama, Atsushi
AU - Hojou, Kiichi
N1 - Funding Information:
This work was partially supported by the Grant-in-Aid for Exploratory Research (#18651063), the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
PY - 2007/11
Y1 - 2007/11
N2 - By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.
AB - By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p-n junction at film-substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.
UR - https://www.scopus.com/pages/publications/35748963537
UR - https://www.scopus.com/pages/publications/35748963537#tab=citedBy
U2 - 10.1016/j.jpcs.2007.08.056
DO - 10.1016/j.jpcs.2007.08.056
M3 - Article
AN - SCOPUS:35748963537
SN - 0022-3697
VL - 68
SP - 2204
EP - 2208
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 11
ER -