Low dark current InGaAs(P)/InP p-i-n photodiodes

Yen Wei Chen, Wei Chou Hsu, Yeong Jia Chen

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Planar InGaAs(P)/InP p-i-n photodiodes have been successfully fabricated by an LP-MOCVD. High-quality and uniform epitaxial layers are obtained. The InGaAs layer background concentration is as low as 4.5×1013 cm-3. The dark current is significantly reduced by using a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current. The p-i-n photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at -10 V bias, corresponding to a dark current density of 4.2×10-7 A/cm2.

原文English
主出版物標題Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
編輯K. T. Chan, H. S. Kwok
發行者Institute of Electrical and Electronics Engineers Inc.
頁面95-98
頁數4
ISBN(電子)0780378873, 9780780378872
DOIs
出版狀態Published - 2003 一月 1
事件6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
持續時間: 2003 九月 122003 九月 14

出版系列

名字Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
國家China
城市Hong Kong
期間03-09-1203-09-14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • 引用此

    Chen, Y. W., Hsu, W. C., & Chen, Y. J. (2003). Low dark current InGaAs(P)/InP p-i-n photodiodes. 於 K. T. Chan, & H. S. Kwok (編輯), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (頁 95-98). [1278173] (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278173