Low firable BiNbO4 based microwave dielectric ceramics

Cheng Liang Huang, Min Hang Weng, Cheng Chi Yu

研究成果: Article同行評審

46 引文 斯高帕斯(Scopus)

摘要

The sintering behavior, the microstructures and the microwave dielectric properties of Bi(Nb, Ta)O4 ceramics with different amount of CuO additions were investigated. The CuO additive, appeared at grain boundary and acted as a sintering aid, could effectively lower the sintering temperature of BiNbO4 ceramics. However, too many CuO additions (> 1 wt.%), too long a soaking time (> 3 h) or too high a sintering temperature (> 960°C) would cause abnormal grain growth resulted in the degradation of densities and dielectric properties of BiNbO4 ceramics. To investigate the microstructures and the dielectric properties of Bi(Nb, Ta)O4 ceramics, 0.5 wt.% CuO addition was selected as a proper sintering aid to reduce the sintering temperature. The dielectric constant εr of BiNb(1-x)TaxO4 ceramics was not significantly changed with Ta substitution and saturated at 44-45 for dense ceramics. The obtained quality values (Q × f) ranged from 4000 to 21 000 (GHz) were found to be functions of the sintering temperatures and the amount of Ta substitution. The τf values were shifted toward negative direction and became more negative with the increase of Ta content. Zero temperature coefficient of resonator frequency could be obtained by properly adjusting the Ta content.

原文English
頁(從 - 到)343-350
頁數8
期刊Ceramics International
27
發行號3
DOIs
出版狀態Published - 2001

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 陶瓷和複合材料
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 材料化學

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