The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.
|頁（從 - 到）||32-35|
|出版狀態||Published - 2000 3月|
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