Low-fire BiTaO4 dielectric ceramics for microwave applications

Cheng Liang Huang; Min Hang Weng

doi:10.1016/S0167-577X(99)00226-8

Low-fire BiTaO₄ dielectric ceramics for microwave applications

Cheng Liang Huang, Min Hang Weng

電機工程學系

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

The dielectric properties at microwave frequencies and the microstructures of BiTaO₄ ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO₄ ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (ε_r) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τ_f was -40 ppm/°C. The BiTaO₄ ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

原文	English
頁（從 - 到）	32-35
頁數	4
期刊	Materials Letters
卷	43
發行號	1
DOIs	https://doi.org/10.1016/S0167-577X(99)00226-8
出版狀態	Published - 2000 3月

All Science Journal Classification (ASJC) codes

材料科學(全部)
凝聚態物理學
材料力學
機械工業

存取文件

10.1016/S0167-577X(99)00226-8

其它文件與鏈接

引用此

@article{0887d994d73d4870a200b263dadcfb1b,

title = "Low-fire BiTaO4 dielectric ceramics for microwave applications",

abstract = "The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.",

author = "Huang, {Cheng Liang} and Weng, {Min Hang}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC-88-2213-E-006-102.",

year = "2000",

month = mar,

doi = "10.1016/S0167-577X(99)00226-8",

language = "English",

volume = "43",

pages = "32--35",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Low-fire BiTaO4 dielectric ceramics for microwave applications

AU - Huang, Cheng Liang

AU - Weng, Min Hang

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC-88-2213-E-006-102.

PY - 2000/3

Y1 - 2000/3

N2 - The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

AB - The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960°C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (εr) saturate at 44-45. The Q × f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960°C. The temperature coefficient of resonant frequency τf was -40 ppm/°C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0033892396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033892396&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(99)00226-8

DO - 10.1016/S0167-577X(99)00226-8

M3 - Article

AN - SCOPUS:0033892396

SN - 0167-577X

VL - 43

SP - 32

EP - 35

JO - Materials Letters

JF - Materials Letters

IS - 1

ER -

Low-fire BiTaO4 dielectric ceramics for microwave applications

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此

Low-fire BiTaO₄ dielectric ceramics for microwave applications