Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

A. Balandin, S. V. Morozov, S. Cai, R. Li, K. L. Wang, G. Wijeratne, C. R. Viswanathan

研究成果: Article同行評審

91 引文 斯高帕斯(Scopus)

摘要

We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10-4) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize their performance. It was also found that the slop γ of the 1/fγ noise density spectrum is in the 1.0-1.3 range for all devices and decreases with the decreasing (i.e., more negative) gate bias. The results are important for low-noise electronic technologies requiring a low phase-noise level.

原文English
頁(從 - 到)1413-1417
頁數5
期刊IEEE Transactions on Microwave Theory and Techniques
47
發行號8
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 輻射
  • 凝聚態物理學
  • 電氣與電子工程

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