Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Sheng Po Chang; Shoou Jinn Chang; Chien Yuan Lu; Yu Zung Chiou; Ricky W. Chuang; Hung Chieh Lin

doi:10.1016/j.jcrysgro.2009.01.044

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Sheng Po Chang, Shoou Jinn Chang, Chien Yuan Lu, Yu Zung Chiou, Ricky W. Chuang, Hung Chieh Lin

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10^-12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10^-13 W and 1.18×10¹³ cm Hz^0.5 W^-1, respectively.

原文	English
頁（從 - 到）	3003-3006
頁數	4
期刊	Journal of Crystal Growth
卷	311
發行號	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.044
出版狀態	Published - 2009 5月 1

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/j.jcrysgro.2009.01.044

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@article{8f79e2fd578741679040905bd55befce,

title = "Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates",

abstract = "Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10-12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10-13 W and 1.18×1013 cm Hz0.5 W-1, respectively.",

author = "Chang, {Sheng Po} and Chang, {Shoou Jinn} and Lu, {Chien Yuan} and Chiou, {Yu Zung} and Chuang, {Ricky W.} and Lin, {Hung Chieh}",

note = "Funding Information: This work was in part supported by Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2009.01.044",

language = "English",

volume = "311",

pages = "3003--3006",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lu, Chien Yuan

AU - Chiou, Yu Zung

AU - Chuang, Ricky W.

AU - Lin, Hung Chieh

N1 - Funding Information: This work was in part supported by Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10-12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10-13 W and 1.18×1013 cm Hz0.5 W-1, respectively.

AB - Nitride-based metal-semiconductor-metal ultraviolet (UV) photodetectors prepared on Si (1 1 1) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95×10-12 A. With an applied bias of 10 V, it was found that peak responsivity was 0.06 A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5 V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70×10-13 W and 1.18×1013 cm Hz0.5 W-1, respectively.

UR - http://www.scopus.com/inward/record.url?scp=65949101258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949101258&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.01.044

DO - 10.1016/j.jcrysgro.2009.01.044

M3 - Article

AN - SCOPUS:65949101258

SN - 0022-0248

VL - 311

SP - 3003

EP - 3006

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 10

ER -

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

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