Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

Tse Pu Chen; Sheng Joue Young; Shoou Jinn Chang; Bohr Ran Huang; Shih Ming Wang; Chih Hung Hsiao; San Lein Wu; Chun Bo Yang

doi:10.1109/JSEN.2012.2200886

Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

Tse Pu Chen, Sheng Joue Young, Shoou Jinn Chang, Bohr Ran Huang, Shih Ming Wang, Chih Hung Hsiao, San Lein Wu, Chun Bo Yang

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D ^*) for the PDs prepared without Ni treatment were 9.95 × 10 ^-8W and 1.59 × 10 ⁷cmHz ^0.5W ^-1, respectively. At the same applied bias, it was also found that NEP and D ^* for PDs prepared with Ni treatment were 1.74 × 10 ^-11W and 9.07 × 10 ¹⁰cmHz ^0.5W ^-1, respectively.

原文	English
文章編號	6204027
頁（從 - 到）	2824-2829
頁數	6
期刊	IEEE Sensors Journal
卷	12
發行號	9
DOIs	https://doi.org/10.1109/JSEN.2012.2200886
出版狀態	Published - 2012

All Science Journal Classification (ASJC) codes

儀器
電氣與電子工程

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10.1109/JSEN.2012.2200886

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@article{083f561c4442456e8eeddc9ab05393b2,

title = "Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing",

abstract = "In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.",

author = "Chen, {Tse Pu} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Huang, {Bohr Ran} and Wang, {Shih Ming} and Hsiao, {Chih Hung} and Wu, {San Lein} and Yang, {Chun Bo}",

note = "Funding Information: Manuscript received September 9, 2011; revised April 25, 2012; accepted May 7, 2012. Date of publication May 23, 2012; date of current version August 1, 2012. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 100-2221-E-150-057, the National Formosa University Research and Services Headquarters, the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University (NCKU), Taiwan D97-2700, and the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education. The associate editor coordinating the review of this paper and approving it for publication was Dr. Alexander Fish.",

year = "2012",

doi = "10.1109/JSEN.2012.2200886",

language = "English",

volume = "12",

pages = "2824--2829",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

AU - Chen, Tse Pu

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Huang, Bohr Ran

AU - Wang, Shih Ming

AU - Hsiao, Chih Hung

AU - Wu, San Lein

AU - Yang, Chun Bo

N1 - Funding Information: Manuscript received September 9, 2011; revised April 25, 2012; accepted May 7, 2012. Date of publication May 23, 2012; date of current version August 1, 2012. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 100-2221-E-150-057, the National Formosa University Research and Services Headquarters, the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University (NCKU), Taiwan D97-2700, and the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education. The associate editor coordinating the review of this paper and approving it for publication was Dr. Alexander Fish.

PY - 2012

Y1 - 2012

N2 - In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.

AB - In this paper, GaN Schottky barrier photodetectors (PDs) prepared with and without Ni treatment were fabricated. I-V and noise characteristics of these devices were then investigated. Comparing the GaN PDs with and without Ni treatment, it was found that GaN PDs prepared with Ni treatment can not only reduce dark current, but also enhance the UV-to-Vis rejection ratio. With an applied bias of -2 V, it was found that noise equivalent power (NEP) and detectivity (D *) for the PDs prepared without Ni treatment were 9.95 × 10 -8W and 1.59 × 10 7cmHz 0.5W -1, respectively. At the same applied bias, it was also found that NEP and D * for PDs prepared with Ni treatment were 1.74 × 10 -11W and 9.07 × 10 10cmHz 0.5W -1, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84864703475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864703475&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2012.2200886

DO - 10.1109/JSEN.2012.2200886

M3 - Article

AN - SCOPUS:84864703475

SN - 1530-437X

VL - 12

SP - 2824

EP - 2829

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 9

M1 - 6204027

ER -

Low-frequency noise characteristics of GaN Schottky barrier photodetectors prepared with nickel annealing

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